| 摘要 |
PROBLEM TO BE SOLVED: To provide a near-field probe based on an SOI substrate, and to provide a manufacturing method of the near-field probe. SOLUTION: The near-field probe comprises a cantilever arm support section 62, that is formed by a lower silicon layer 10 of an SOI substrate 18 and has a through hole 36 at one side of the lower silicon layer 10; and a cantilever arm 64, formed by a junction oxide layer pattern 12 and an upper silicon layer pattern 16a of the SOI substrate 18, that are supported on the upper surface of the lower silicon layer 10 and have holes that are smaller than the through hole 36; a silicon oxide layer pattern 26a, having a chip 38 with an aperture 40 at the tip to the hole 36 on the upper silicon layer pattern 16a; and a light transmission preventing layer 42 formed on the silicon oxide layer pattern 26a, without embedding the aperture 40. COPYRIGHT: (C)2007,JPO&INPIT
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