| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and semiconductor manufacturing equipment which can suppress the variation in properties among semiconductor devices. SOLUTION: The method of manufacturing a semiconductor device comprises processes of forming a transistor electrode on a semiconductor wafer, measuring the processed shape of the transistor electrode, estimating an impurity implantation region based on the measured processed shape of the transistor electrode, calculating the conditions for impurity implantation for the estimated impurity introduction region to obtain desired standard properties, and introducing impurities into the semiconductor wafer under the calculated impurity introduction conditions. COPYRIGHT: (C)2007,JPO&INPIT
|
