| 摘要 |
A method for forming a capacitor is provided to simplify manufacturing processes and to reduce a fabrication time by omitting a lower electrode forming process using a lower metal line as a lower electrode of the capacitor. A lower structure(21) including a lower metal line is prepared, wherein the lower metal line is used as a lower electrode of a capacitor. A dielectric film(23) is formed on the lower structure. An upper metal line(24) is formed on the dielectric film by forming an upper metal line layer and etching selectively the upper metal line layer using a photoresist pattern as an etch mask. An etching process is performed on the upper metal line. The metal lines are composed of a copper pad. The dielectric film is made of a nitride layer.
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