发明名称 |
Method of fabricating pseudomorphic high electron mobility transistor |
摘要 |
Provided is a method of fabricating a pseudomorphic high electron mobility transistor (PHEMT). The method includes the steps of: preparing a substrate including a channel layer and a capping layer that is the uppermost layer; forming a source and a drain on the capping layer; forming a first protective layer on the entire surface of the resultant structure and then patterning the first protective layer to expose a portion of the capping layer in a channel region; removing the exposed portion of the capping layer to form a first recess structure; forming a second protective layer on the entire surface of the resultant structure and then patterning the second protective layer to expose a portion of the substrate in the first recess structure so that a second recess structure is formed; forming a multilayered photoresist layer on the entire surface of the resultant structure and then patterning the multilayered photoresist layer to expose a portion of the substrate through the second recess structure and form a gate-shaped opening; and depositing a metal layer to fill the gate-shaped opening and then removing the multilayered photoresist layer to form a gate connected to the substrate through the second recess structure.
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申请公布号 |
US2007134862(A1) |
申请公布日期 |
2007.06.14 |
申请号 |
US20060446750 |
申请日期 |
2006.06.05 |
申请人 |
LIM JONG WON;AHN HO KYUN;JI HONG GU;CHANG WOO JIN;MUN JAE KYOUNG;KIM HEA CHEON |
发明人 |
LIM JONG WON;AHN HO KYUN;JI HONG GU;CHANG WOO JIN;MUN JAE KYOUNG;KIM HEA CHEON |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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