SELF-ALIGNED TRENCH FIELD EFFECT TRANSISTORS WITH REGROWN GATES AND BIPOLAR JUNCTION TRANSISTORS WITH REGROWN BASE CONTACT REGIONS AND METHODS OF MAKING
摘要
<p>Junction field-effect transistors with vertical channels and self-aligned regrown gates and methods of making these devices are described. The methods use techniques to selectively grow and/or selectively remove semiconductor material to form a p-n junction gate along the sides of the channel and on the bottom of trenches separating source fingers. Methods of making bipolar junction transistors with self- aligned regrown base contact regions and methods of making these devices are also described. The semiconductor devices can be made in silicon carbide.</p>
申请公布号
WO2007067458(A1)
申请公布日期
2007.06.14
申请号
WO2006US46180
申请日期
2006.12.04
申请人
SEMISOUTH LABORATORIES, INC.;MERRETT, JOSEPH, NEIL;SANKIN, IGOR