发明名称 |
SOLID-STATE IMAGING DEVICE |
摘要 |
<p>Fixed pattern noise (FPN) is reduced and area increase of an image cell is suppressed. A photoelectric conversion signal is generated from a photo current flowing in a photodiode (PD) in a pixel (Ca). A first transistor (T1) functioning as a load transistor is driven to operate within a sub-threshold region after being operated in strong inversion status. The potential of a sense node (N1) is read as a reset signal while the first transistor (T1) is operating within the sub-threshold region. Then, an image signal (Vs) is generated by calculating the difference between the photoelectric conversion signal and the reset signal.</p> |
申请公布号 |
WO2007066762(A1) |
申请公布日期 |
2007.06.14 |
申请号 |
WO2006JP324562 |
申请日期 |
2006.12.08 |
申请人 |
OMRON CORPORATION;HASHIMOTO, MASASHI |
发明人 |
HASHIMOTO, MASASHI |
分类号 |
H04N5/217;H04N5/355;H04N5/357;H04N5/365;H04N5/374 |
主分类号 |
H04N5/217 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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