| 摘要 |
PROBLEM TO BE SOLVED: To enhance the performance capability of an element such as a high performance memory, a capacity element, etc., which is used in the electronic circuit in an electronic device, especially an extremely small-sized high speed operation memory circuit or an integrated circuit operated in a high frequency region and has a combination of a dielectric and a conductive multilayered film as a basic constitution. SOLUTION: A first conductor thin film 103 is constituted of the first inclined function region 131 arranged on the side of a second conductor thin film 102 and the first conductor phase 132 arranged on the side of a dielectric phase 104. The first inclined function region 131, which constitutes the first conductor thin film 103, is gradually changed at least in one state among a chemically bonded state, an atomic arrangement structural state and an electrically specific state from the side of an electrode 101 to the side of a dielectric phase 104 and has an inclination function for realizing the enhancement of lattice alignment due to buffering action and the enhancement of diffusion controllability due to barrier action. COPYRIGHT: (C)2007,JPO&INPIT
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