METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to shorten a process time and reduce a manufacturing cost by simplifying a planarization process. A cylindrical capacitor(260) is formed on a cell region(C) of a semiconductor substrate(200) including the cell region and a peripheral region(P). An interlayer dielectric(270) is formed on the semiconductor substrate. An amorphous carbon layer(280) is formed on the interlayer dielectric. A first CMP process using a first slurry is performed to polish the amorphous carbon layer of the cell region and a part of the interlayer dielectric. A second CMP process using a second slurry is performed to remove the amorphous carbon layer of the peripheral region and to planarize the interlayer dielectric of the cell region and the peripheral region.