发明名称 CHEMICAL VAPOR DEPOSITION APPARATUS
摘要 A CVD apparatus is provided to selectively replace or repair the damaged part of a shaft by including a spindle shaft composed of a body part and a head part capable of being separated from the body part such that the spindle shaft transfers the rotation force of a driving motor to a spindle fork. A plurality of semiconductor substrates are received in a process chamber having a plurality of stations wherein process gas is supplied to the process chamber to form a layer on each substrate by a CVD method. A spindle fork supports the substrate in a manner that the substrates are separately disposed in a circumferential direction with respect to the center axis of the spindle fork, installed in the process chamber. A spindle shaft assembly(420) transfers rotation force to selectively locate the substrates in the stations, connected to the spindle fork and including a body part(424) and a head part(422) that is detachably coupled to the body part. A process gas supplying part supplies the process gas to each station. A heating part heats the substrates to a process temperature. A vacuum supply part adjusts the pressure in the process chamber and removes the byproducts generated during the fabricating process.
申请公布号 KR20070060172(A) 申请公布日期 2007.06.13
申请号 KR20050119148 申请日期 2005.12.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, HYO SEOK
分类号 H01L21/205 主分类号 H01L21/205
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