| 摘要 |
A method for manufacturing a semiconductor device having a recess gate is provided to remove a global step of a polysilicon layer by performing a first CMP process using a first slurry based on silica and a second CMP process using a second slurry based on ceria. A groove is formed by recessing a gate region of a semiconductor substrate(400). A gate insulating layer(420) is formed on the semiconductor substrate including the groove. A polysilicon layer as the gate conductive layer is formed on the gate insulating layer to bury the groove. A first CMP process using a first slurry based on silica is performed. The remaining part of the first slurry is removed from the polysilicon layer. A second CMP process using a second slurry based on ceria is performed to planarize the polysilicon layer.
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