| 摘要 |
A method for fabricating a semiconductor device is provided to avoid a variation caused by a width difference of a spacer between patterns by partially oxidizing a nitride layer by a radical oxide process to form a spacer layer having a triple structure of an oxide layer, a nitride layer and an oxide layer and by forming a spacer. A plurality of conductive patterns having a difference of density are formed on a semiconductor substrate(21). First and second gate spacer layers(24,26) are formed on the conductive pattern. The second gate spacer layer is oxidized. The oxidized second gate spacer layer is removed. The residual second and first gate spacer layers are sequentially etched to form first and second gate spacers on both sidewalls of the conductive pattern. The second gate spacer layer can be oxidized by a radical oxide process. The first gate spacer layer can be formed by a light oxide process.
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