GOLD BUMP BY ELECTROPLATING AND FABRICATION METHOD THEREOF

摘要

A gold bump structure which can reduce defective proportion generated due to causes such as lead opening and the like in a process of bonding the gold bump to semiconductor chips and so on by improving non-uniformity of the gold bump with respect to thickness of a gold bump formed by a plating process, and a fabrication method of the gold bump structure are provided. A gold bump comprises: a seed metal layer formed on a substrate; a plating bump layer formed on an upper portion of the seed metal layer; and a domed gold-rich process alloy formed on an upper portion of the plating bump layer and made from a metal with a low melting point. A fabrication method of a gold bump comprises the steps of: forming a seed metal layer(23) on a substrate(21); plating and forming a gold bump layer(25) on the seed metal layer; forming a metal layer with a low melting point on the gold bump layer; and forming a domed gold-rich process alloy(27) on an upper portion of the low melting point metal layer-formed gold bump layer. The method further comprises the steps of: forming an adhesion layer(22) between the seed metal layer and the substrate; removing the exposed seed metal layer and the adhesion layer under the exposed seed metal layer; and forming a photosensitive film for forming patterns of the gold bump layer.