| 摘要 |
A thin film transistor is provided to pattern a source/drain electrode and a semiconductor layer without necessitating a bank layer by performing an ink-jet printing process after a first concave part, a second concave part and a first portion between the first and the second concave parts in a substrate or an insulation layer. A first concave part(13) and a second concave part(14) are formed in a substrate(11) or an insulation layer. A first part(15) is positioned between the first concave part and the second concave part. A source/drain electrode is ink-jet printed in the first and second concave parts, higher than the first part. An organic semiconductor layer is ink-jet printed in the first part between the source electrode and the drain electrode. The first part can be higher than the first and second concave parts and be lower than the height of the substrate.
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