发明名称 |
THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE |
摘要 |
<p>Provided is a thin film transistor substrate which has an aluminum alloy film, which constitutes source/drain wirings, directly connected with a transparent electrode, has excellent source/drain wiring characteristics and excellent gate wiring characteristics, and is manufactured by remarkably simplified process. The thin film transistor substrate is provided with a gate wiring, and the source wiring and the drain wiring which orthogonally intersect with the gate wiring. The thin film transistor substrate is characterized in that the composition of a single layer aluminum alloy film constituting the gate wiring and that of a single layer aluminum alloy film constituting the source wiring and the drain wiring are the same. Furthermore, a display device provided with the thin film transistor substrate is also provided.</p> |
申请公布号 |
WO2007063991(A1) |
申请公布日期 |
2007.06.07 |
申请号 |
WO2006JP324106 |
申请日期 |
2006.12.01 |
申请人 |
KABUSHIKI KAISHA KOBE SEIKO SHO;GOTOH, HIROSHI;KUGIMIYA, TOSHIHIRO;TOMIHISA, KATSUFUMI |
发明人 |
GOTOH, HIROSHI;KUGIMIYA, TOSHIHIRO;TOMIHISA, KATSUFUMI |
分类号 |
G02F1/1368;G02F1/1343;G09F9/30;H01L21/28;H01L21/3205;H01L21/768;H01L23/52;H01L23/532;H01L29/417;H01L29/423;H01L29/49;H01L29/786 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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