发明名称 COMPLEX RF DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To realize a complex RF device which includes a plurality of functions and features of small size and low height, in a high-definition state, without damaging the crystallinity of piezoelectric body. <P>SOLUTION: The complex RF device is constituted of two RF circuits stacked in the vertical direction. The complex RF device comprises a substrate, a second RF circuit provided on the substrate, and a first RF circuit which is provided on the second circuit and dispenses with a substrate. The first RF circuit is formed on another substrate, before being transferred onto the second RF circuit. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007143127(A) 申请公布日期 2007.06.07
申请号 JP20060282902 申请日期 2006.10.17
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YAMAKAWA TAKEHIKO;NAKATSUKA HIROSHI;ONISHI KEIJI
分类号 H03H9/70;H01L21/822;H01L27/04;H01L41/09;H01L41/187;H01L41/22;H01L41/311;H01L41/313;H03H3/02;H03H9/02;H03H9/17;H03H9/54 主分类号 H03H9/70
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