发明名称 |
BIPOLAR JUNCTION TRANSISTORS (BJTS) WITH SECOND SHALLOW TRENCH ISOLATION (STI) REGIONS, AND METHODS FOR FORMING SAME |
摘要 |
The present invention relates to bipolar junction transistors (BJTS). The collector region of each BJT is located in a semiconductor substrate surface and adjacent to a first shallow trench isolation (STI) region. A second STI region is provided, which extends between the first STI region and the collection region and undercuts a portion of the active base region with an undercut angle of not more than about 90°. For example, the second STI region may a substantially triangular cross-section with an undercut angle of less than about 90°, or a substantially rectangular cross-section with an undercut angle of about 90°. Such a second STI region can be fabricated using a porous surface section formed in an upper surface of the collector region.
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申请公布号 |
US2007126080(A1) |
申请公布日期 |
2007.06.07 |
申请号 |
US20050164757 |
申请日期 |
2005.12.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
WALLNER THOMAS A.;ADAM THOMAS N.;BEDELL STEPHEN W.;DE SOUZA JOEL P. |
分类号 |
H01L27/082 |
主分类号 |
H01L27/082 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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