| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist protective film formed on a resist film in a pattern forming method by liquid immersion lithography, which is insoluble in water and soluble in an alkaline aqueous solution (alkali developer), excels in water-sliding property, does not mix with the resist film, allows good liquid immersion lithography, and also allows simultaneous development of the resist film and removal of the protective film during alkali development. <P>SOLUTION: A resist protective film material for liquid immersion lithography is provided which uses a high molecular compound comprising a repeating unit having both of a fluoroalkyl group and an alkyl group (selected from an α-substituted acrylate and a norbornene derivative). <P>COPYRIGHT: (C)2007,JPO&INPIT |
