| 摘要 |
A method for forming a gate electrode in a semiconductor device is provided to prevent the damage of a substrate due to a conventional dry etching process on an SiON layer by removing simultaneously a hard mask and the SiON layer using a wet etching process. A gate insulating layer(21), a gate conductive layer(22), a hard mask and an anti-reflective coating are sequentially formed on a substrate(20). A plurality of gate structures are formed on the resultant structure by etching selectively the anti-reflective coating, the hard mask, the gate conductive layer and the gate insulating layer. A photoresist pattern(25) is formed on the resultant structure. A dry etching process is performed on the photoresist pattern to reduce the thickness. A wet etching process is performed on the resultant structure to remove simultaneously the anti-reflective coating and the hard mask.
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