发明名称 REFERENCE VOLTAGE GENERATION CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide an accurate reference voltage generation circuit allowed to be used also for an A/D converter with the large number of bits and capable of reducing a change in output voltage due to a temperature change. SOLUTION: The temperature-compensated reference voltage generation circuit comprises a reference voltage generation part 1 having a zero temperature coefficient point and a compensation circuit part 10. The compensation circuit part 10 inputs an output from the reference voltage generation part 1 to compensate temperature. The compensation circuit part 10 includes a first MOS transistor 101 having a characteristic for increasing a drain current in accordance with the rise of temperature in an area lower than the zero temperature coefficient point and a second MOS transistor 102 having a characteristic for reducing the drain current in accordance with the rise of temperature in an area higher than the zero temperature coefficient point. Further, the compensation circuit part 10 includes an adder circuit 110 having an output terminal V<SB>ref</SB>for mutually adding currents corresponding to these two drain currents and outputting the added current. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007133637(A) 申请公布日期 2007.05.31
申请号 JP20050325772 申请日期 2005.11.10
申请人 UNIV NIHON 发明人 SEKINE YOSHIFUMI;SAEKI KATSUTOSHI
分类号 G05F3/24;H03F1/30;H03F3/345 主分类号 G05F3/24
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