发明名称 THIN FILM DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To suppress variations in characteristics of a capacitor caused by a change in a relative positional relation between a pair of conductor layers forming a pair of electrodes in the capacitor in a thin film device having the capacitor. SOLUTION: A thin film device 1 comprises a substrate 2 and a capacitor 3 provided on the substrate 2. The capacitor 3 has: a lower conductor layer 10; a dielectric film 20 provided partially on the lower conductor layer 10; and an upper conductor layer 30 provided on the dielectric layer 20. The lower conductor layer 10 has an upper surface, side surfaces, and angular parts formed by these surfaces. The upper conductor layer 30 includes an upper electrode 30a having a lower surface opposed to the upper surface of the lower conductor layer 10 via the dielectric film 20. When viewed from the upper side of the upper conductor layer 30, the outer edge of the lower surface of the upper electrode 30a are arranged at the inner side of the lower conductor layer 10 without being contacted with the outer edge of the upper surface of the lower conductor layer 10. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007134587(A) 申请公布日期 2007.05.31
申请号 JP20050327643 申请日期 2005.11.11
申请人 TDK CORP 发明人 KUWAJIMA HAJIME;MIYAZAKI MASAHIRO;FURUYA AKIRA
分类号 H01G4/33;H01L21/822;H01L27/04;H05K1/16 主分类号 H01G4/33
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