| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma CVD device and a method of fabricating an oxide film capable of suppressing a variation in a film thickness of an oxide film even in a case that self-cleaning is periodically performed, in forming an oxide film by means of a plasma CVD process. SOLUTION: Disclosed is a method of forming an oxide film using a plasma CVD (Chemical Vapor Deposition) device. The method of forming an oxide film includes a step of self-cleaning for cleaning a film-forming chamber of a plasma CVD device using plasma. When the temperature in a discharging outlet of a feedstock gas is in a given range, an oxide film is formed on a substrate installed in the film-forming chamber, and when the temperature in a discharging outlet of a feedstock gas is not in the given range, no oxide film is formed. In forming the oxide film, the temperature in the discharging outlet of a feedback gas is kept in the given range through a heat transfer between the substrate installed in the film-forming chamber and the discharging outlet of a gas. COPYRIGHT: (C)2007,JPO&INPIT
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