发明名称 |
RFZOFUKUKINIOKERUBAIASUKAIRO |
摘要 |
PURPOSE:To obtain a DC bias circuit for an RF amplifier which performs low- voltage AGC operation with low power consumption by generating a necessary voltage by using a constant voltage element such as a Zener diode. CONSTITUTION:A resistance 18 is set to an about 40OMEGA resistance value and the Zener voltage of the Zener diode 20 is set to about 2V. Resistances 9 and 17 have about 10KOMEGA high resistance and the Zener voltage is impressed to the 1st gate 2 through the resistance 17. A resistance 19 is set almost to 1-4KOMEGA considering that an operating current of about 1-5mA is flowed from a driving source terminal 16 to the Zener diode 20. Consequently, the voltage VG2S between the 2nd gate 3 and source 5 varies between -2-2.4V against 0-5V variation of the AGC signal at a terminal 7 to obtain sufficient gain attenuation. |
申请公布号 |
JPH0247884(B2) |
申请公布日期 |
1990.10.23 |
申请号 |
JP19830059939 |
申请日期 |
1983.04.07 |
申请人 |
HITACHI LTD |
发明人 |
SAITO TAKESHI;SHINKAWA TAKAO;YAMAMOTO AKIO;HATASHITA HIROSHI |
分类号 |
H03F1/30;H03G1/00;H03G3/10 |
主分类号 |
H03F1/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|