发明名称 RFZOFUKUKINIOKERUBAIASUKAIRO
摘要 PURPOSE:To obtain a DC bias circuit for an RF amplifier which performs low- voltage AGC operation with low power consumption by generating a necessary voltage by using a constant voltage element such as a Zener diode. CONSTITUTION:A resistance 18 is set to an about 40OMEGA resistance value and the Zener voltage of the Zener diode 20 is set to about 2V. Resistances 9 and 17 have about 10KOMEGA high resistance and the Zener voltage is impressed to the 1st gate 2 through the resistance 17. A resistance 19 is set almost to 1-4KOMEGA considering that an operating current of about 1-5mA is flowed from a driving source terminal 16 to the Zener diode 20. Consequently, the voltage VG2S between the 2nd gate 3 and source 5 varies between -2-2.4V against 0-5V variation of the AGC signal at a terminal 7 to obtain sufficient gain attenuation.
申请公布号 JPH0247884(B2) 申请公布日期 1990.10.23
申请号 JP19830059939 申请日期 1983.04.07
申请人 HITACHI LTD 发明人 SAITO TAKESHI;SHINKAWA TAKAO;YAMAMOTO AKIO;HATASHITA HIROSHI
分类号 H03F1/30;H03G1/00;H03G3/10 主分类号 H03F1/30
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