| 摘要 |
<p>A non-volatile memory has a plurality of word lines, a plurality of bit lines and a plurality of memory elements having stored information corresponding to electric charges accumulated at floating gates at the intersections of the plurality of word lines and the plurality of bit lines, and electrically performing operations to write and erase the stored information. A write control circuit for controlling the electric charges accumulated at the floating gates by performing a verify operation, after performing a write operation in a prescribed write quantity on the memory elements, carries out one or more each of search write operations, set to a smaller write quantity than the prescribed write quantity at the time of start of writing, and verify operations matching thereto.</p> |
