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发明名称
METHOD FOR FORMING DRAIN CONTACT OF SEMICONDUCTOR MEMORY DEVICE
摘要
申请公布号
KR20070054297(A)
申请公布日期
2007.05.29
申请号
KR20050112143
申请日期
2005.11.23
申请人
HYNIX SEMICONDUCTOR INC.
发明人
LEE, BYOUNG KI
分类号
H01L27/115
主分类号
H01L27/115
代理机构
代理人
主权项
地址
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