| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance the heat generating efficiency of a non-volatile memory element provided with a recording layer containing a phase changing material. <P>SOLUTION: The memory element is provided with a bottom electrode 12; a bit line 14 provided on the bottom electrode 12; and the recording layer 15 containing the phase changing material and connecting the bottom electrode 12 to the bit line 14. The bit line 14 has a stereoscopic structure that is in contact with a film formation initiation surface 15a of the recording layer 15. This structure can decrease the area of contact between the recording layer 15 and the bit line 14, and can decrease heat dissipated to the bit line 14, without increasing the film thickness of the recording layer 15. Furthermore, by employing this stereoscopic structure, a top electrode provided in between the bit line 14 and the recording layer 15 can be omitted, and in this case, the process becoming complex can be suppressed. <P>COPYRIGHT: (C)2007,JPO&INPIT |
