| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem in the prior art wherein material quality/thickness of the insulting film between a control gate and a floating gate in a non-volatile memory are set to the optimum material/thickness can not be made optimum for non-volatile memory, without increasing the manufacturing steps, at the loading both DRAM and non-volatile memory (for example, flash memory) on the same semiconductor substrate. <P>SOLUTION: A wire is made to function as a control gate, and a contact and a gate electrode, connected to this contact, are made to function as a floating gate. <P>COPYRIGHT: (C)2007,JPO&INPIT |
