| 摘要 |
<p>A silicon dioxide film (2) is disposed on a silicon substrate (1), and a polycrystalline silicon film (3) is formed on the silicon dioxide film (2) by low-pressure CVD at a partial pressure of monosilane of 10 Pa or lower at 600 °C or higher. This polycrystalline silicon film is doped, for example, with phosphorus at 1x1020 to 1x1021/cm3, to form a phosphosilicate glass film (6). After this film is removed, thermal oxidation is carried out in an oxidizing atmosphere to form an insulating film (5) on the surface. A polycrystalline silicon film (4) is formed on this insulating film (5) so as to obtain a polycrystalline silicon film (4a) which is oriented in the same way as an oriented polycrystalline silicon film (3a). The oriented polycrystalline silicon film (4a) is connected as an upper electrode while the oriented polycrystalline silicon film (3a) is connected as a lower electrode to obtain a semiconductor device having a capacitor. A thin film transistor having a high dielectric breakdown voltage formed on the polycrystalline silicon oriented within a short time can be produced within a short time.</p> |
