发明名称 |
Methods of forming integrated circuit devices including raised source/drain structures having different heights |
摘要 |
Integrated circuit devices including raised source/drain structures having different heights are disclosed. An integrated circuit device can include a first raised source/drain structure having a first height above a substrate in a first region of the integrated circuit including devices formed at a first density. The integrated circuit device can further include a second raised source/drain structure having a second height that is greater than the first height in a second region of the integrated circuit including second devices formed at a second density that is less than the first density. |
申请公布号 |
US7220648(B2) |
申请公布日期 |
2007.05.22 |
申请号 |
US20050200783 |
申请日期 |
2005.08.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JI-YOUNG |
分类号 |
H01L21/336;H01L29/78;H01L21/8238;H01L21/8239 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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