CONTACT PAD STRUCTURE FOR FLIP CHIP SEMICONDUCTOR DIE

摘要

A flip chip Schottky die is provided, which includes three contact bumps extending from a top surface of the die for electrically connecting with a board, a first and second bump being cathode contacts, and a third bump being an anode contact and having a larger surface than each of the first and second bumps for a 0.5 ampere device. Each bump is substantially rectangular at its base, but may have a curved or arched top surface on a square die. Also, provided is a contact bump useful in a flip chip device, such as a MOSFET or diode for a current of 1.0 amperes that includes a solder body of PbSn or a solder body free of lead comprising SnAgCu. Such a contact bump is substantially rectangular, and a height of approximately 120µm.