| 摘要 |
PROBLEM TO BE SOLVED: To provide a tunnel magnetoresistance effect element where low RA (element resistance×element area) and low interlayer coupling magnetic field (Hin) can be obtained while a resistance change rate (ΔR/R) is maintained to a high value, and to provide a method of manufacturing the same. SOLUTION: An upper face 4c1 of a second fixed magnetic layer 4c is plasma-processed, and an interface modification processing is performed on it. An insulating barrier layer 5 formed just above the second fixed magnetic layer 4c is formed of titanium oxide. Thus, low RA and the low interlayer coupling magnetic field (Hin) can be obtained while the resistance change rate (ΔR/R) is maintained to the high value. COPYRIGHT: (C)2007,JPO&INPIT
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