| 摘要 |
A multi-layer crack stop structure is described, disposed entirely in a die, entirely in a scribe line region outside the die, or partially in the die and partially in the scribe line region. The multi-layer crack stop structure is formed by stacking multiple layers of hollow crack stop units. The multi-layer crack stop structure can effectively prevent some damages like chipping, delamination or peeling-off from occurring to the active circuit region when the wafer is being sawn or when the die is subject to thermal cycles for testing, so that a better die can be obtained and the reliability of the packaged die can be significantly improved. |
