| 发明名称 |
Ferroelectric thin film, method of manufacturing the same, ferroelectric memory device and ferroelectric piezoelectric device |
| 摘要 |
A ferroelectric thin film formed of a highly oriented polycrystal in which 180° domains and 90° domains arrange at a constant angle to an applied electric field direction in a thin film plane and reversely rotate in a predetermined electric field.
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| 申请公布号 |
US7214977(B2) |
申请公布日期 |
2007.05.08 |
| 申请号 |
US20050241959 |
申请日期 |
2005.10.04 |
| 申请人 |
SEIKO EPSON CORPORATION |
发明人 |
KIJIMA TAKESHI;HAMADA YASUAKI;NATORI EIJI |
| 分类号 |
H01L29/76;H01L21/316;H01L21/8246;H01L27/105;H01L29/94;H01L31/00 |
主分类号 |
H01L29/76 |
| 代理机构 |
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代理人 |
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