发明名称 |
METHOD FOR PRODUCING THIN CADMIUM-TELLURIDE FILMS |
摘要 |
FIELD: epitaxial growth of thin films from gas phase. ^ SUBSTANCE: proposed method for producing thin cadmium-telluride films includes following procedures: cadmium-telluride source is disposed in bottom part of vertically mounted reactor of "hot wall" type and cadmium-mercury telluride substrate is placed at distance of minimum 10 reactor diameters above this source; reactor is connected to 10-3 Pa vacuum exhaust system so that source temperature amounts to 500 °C; temperature in area between source and substrate at distance of minimum 10 reactor diameters is 550-600 °C; condensing region and substrate temperature is maintained between 250 and 300 °C; distance between condensing region boundary and substrate is maintained at level not over free path length of gas phase molecules at condensation temperature. ^ EFFECT: ability of producing thin cadmium telluride films on cadmium-mercury telluride surface in hot-wall reactor. ^ 1 cl |
申请公布号 |
RU2298251(C1) |
申请公布日期 |
2007.04.27 |
申请号 |
RU20050131776 |
申请日期 |
2005.10.13 |
申请人 |
FEDERAL'NOE GOSUDARSTVENNOE UNITARNOE PREDPRIJATIE "NPO "ORION" |
发明人 |
GOLOVIN SERGEJ VADIMOVICH;BURLAKOV IGOR' DMITRIEVICH |
分类号 |
H01L21/365 |
主分类号 |
H01L21/365 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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