| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an electrode structure that is highly reliable and can obtain improved low-resistance contact with an n-type Al<SB>X</SB>Ga<SB>Y</SB>In<SB>1-X-Y</SB>N (0≤X≤1, 0≤Y≤1, X+Y≤1) semiconductor layer or a non-doped Al<SB>X</SB>Ga<SB>Y</SB>In<SB>1-X-Y</SB>N (0≤X≤1, 0≤Y≤1, X+Y≤1) semiconductor layer, and to provide a method of manufacturing the same. SOLUTION: The semiconductor device has an electrode in low-resistance contact with the semiconductor layer on the n-type Al<SB>X</SB>Ga<SB>Y</SB>In<SB>1-X-Y</SB>N (0≤X≤1, 0≤Y≤1, X+Y≤1) semiconductor layer or the non-doped Al<SB>X</SB>Ga<SB>Y</SB>In<SB>1-X-Y</SB>N (0≤X≤1, 0≤Y≤1, X+Y≤1) semiconductor layer. In the semiconductor device, the electrode comprises Cr containing at least Ge. COPYRIGHT: (C)2007,JPO&INPIT
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