| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress variation in the line width of a resist pattern due to the variations in the thickness of a resist film when the resist pattern is formed by exposing the chemically amplified resist film. <P>SOLUTION: A resist material comprises a polyhydroxystyrene resin in which hydroxyl groups are protected with dissolution inhibiting groups, a phenol novolac resin, a photoacid generator capable of generating an acid upon exposure and a diazonaphthoquinone compound. <P>COPYRIGHT: (C)2007,JPO&INPIT |
