| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To materialize a solar cell with high reliability without secular variation, as well as with high photoelectric conversion efficiency. <P>SOLUTION: A unit cell 10 (unit cell) is formed from a lower electrode layer 2 (Mo electrode layer) formed on a substrate 1 (substrate), an optical absorption layer 3 (CIGS (Cu (InGa) Se) optical absorption layer) containing copper/indium/gallium/selenium, a buffer layer thin film 4 of high resistance formed with InS, ZnS, CdS and the like on the optical absorption layer 3, and an upper electrode layer 5 (TCO (Transparent Conducting Oxide)) formed by ZnOAl and the like. Further, a contact electrode 6 for connecting an upper electrode layer 5 and a lower electrode layer 2 is formed so as to carry out series connection of two or more unit cells 10. The contact electrode 6 has a Cu/In ratio larger than the Cu/In ratio of the optical absorption layer 3, in other words, the element In is less comprised so that the characteristics of p<SP>+</SP>(plus) type or an electric conductor may be made shown to the optical absorption layer 3 of a p-type semiconductor. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
