Blanket implant diode which can be used for transient voltage suppression having a P+ substrate implanted with an N-type dopant blanket implant near a top surface of the substrate, creating a P- region. An oxide mask is layered adjacent to and above the P- region. The oxide mask is partially etched away from a portion of the P- region, creating an etched region. An N-type main function implant is implanted into the etched region, creating an N+ region above the P+ substrate and adjacent the P- region. And, a metal is layered above the oxide mask in the etched region to form an electrode. Terminations may be attached electrically to both sides of the P-N junction. Methods of making and using the present invention and methods for transient voltage suppression are also provided.
申请公布号
WO2007046936(A2)
申请公布日期
2007.04.26
申请号
WO2006US32059
申请日期
2006.08.17
申请人
VISHAY GENERAL SEMICONDUCTOR INC.;DAI, SHENG-HUEI;KING, YA-CHIN;HUANG, CHUN-JEN;KAO, L.C.