发明名称 ELECTRIC FIELD READ/WRITE HEAD AND METHOD OF MANUFACTURING THE SAME AND INFORMATION STORAGE DEVICE COMPRISING ELECTRIC FIELD READ/WRITE HEAD
摘要 An electric field read/write head and a manufacturing method thereof and an information storage apparatus including the electric field read/write head are provided to improve resolution and sensitivity of an electric field read/write head by making the channel of the resistance sensor thinner and restricting DIBL(Drain Induced Barrier Lowering). An electric field read/write head(100) includes a resistance sensor for reading the information recorded in a recording medium. The resistance sensor comprises a first semiconductor layer(30) including a source(S2) and a drain(D2), and a second semiconductor layer(40) which is heterogeneously joined with the first semiconductor layer, where the channel(C2) between the drain and source is junction area of the first and the second semiconductor layer.
申请公布号 KR20090035872(A) 申请公布日期 2009.04.13
申请号 KR20070100890 申请日期 2007.10.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUNG, JU HWAN;KO, HYOUNG SOO;HONG, SEUNG BUM
分类号 G11B5/127;G11B5/39 主分类号 G11B5/127
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