SEMICONDUCTOR STRUCTURE INCLUDING PREMETAL DIELECTRIC AND METHOD OF FORMING PREMETAL DIELECTRIC IN SEMICONDUCTOR STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide: a semiconductor structure including a premetal dielectric; and the method of carrying out deposition of the premetal dielectric in the semiconductor structure.

SOLUTION: The semiconductor structure includes a substrate 1 with each constituent element 2, 3, 4, 9, and 11 on the surface. Each constituent element 2, 3, 4, 9, and 11 are spaced apart from one another so that at least one gap is formed. The gap is filled with the advantageous combination of a layer. The combination includes the layer of a dielectric 14 for spin-on formation at least. Further, a semiconductor structure includes a premetal dielectric in which another insulating film is arranged or a silicate glass layer 16 is arranged in which phosphorus is doped. The use of the combination of each layer suppresses or prevents the occurrence of a void 17 in the filling of the gap. In the semiconductor structure, each property is obtained which is chemically and/or mechanically, and/or electronically advantageous.

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