| 发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To adjust driving force of a MIS transistor in a semiconductor device. <P>SOLUTION: A compressive stress-containing insulating film 50 and a tensile stress-containing insulating film 51 are formed on an n-type MIS transistor in an SRAM access region SA. The tensile stress-containing insulating film 51 is formed on an n-type MIS transistor in an SRAM drive region SD. <P>COPYRIGHT: (C)2007,JPO&INPIT |
| 申请公布号 |
JP2007109973(A) |
申请公布日期 |
2007.04.26 |
| 申请号 |
JP20050300703 |
申请日期 |
2005.10.14 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
KOTANI NAOKI |
| 分类号 |
H01L21/8244;H01L21/8238;H01L27/092;H01L27/10;H01L27/11;H01L29/78 |
主分类号 |
H01L21/8244 |
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