Light-emitting device and light-emitting apparatus using the same

摘要

A light-emitting device and a light-emitting apparatus using the same are provided. The light-emitting device includes: an n-type or p-type substrate (11); a doped region (15); a resonator (21,25) which improves the selectivity of wavelength of the light emitted from the p-n junction; and first and second electrodes (17,19) formed on one surface and the other surface of the substrate, respectively, for injection of holes and electrons. The light-emitting device includes the ultra-shallow doped region (15) so that it can emit light with a quantum confinement effect in a p-n junction (14). A resonator structure (21,25) for resonating only a particular wavelength range of light is added to the light-emitting device so that the selectivity of light wavelength is markedly improved with excellent efficiency. The intensity of light emission is amplified by the resonator structure (21,25), and the directional property of the emitted light can be improved further than that of conventional light-emitting devices.