发明名称 |
Semiconductor device with high conductivity region using shallow trench |
摘要 |
A method and structure is provided for an integrated circuit with a semiconductor substrate having an opening provided therein. A doped high conductivity region is formed from doped material in the opening and a diffused dopant region proximate the doped material in the opening. A structure is over the doped high conductivity region selected from a group consisting of a wordline, a gate, a dielectric layer, and a combination thereof.
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申请公布号 |
US7208382(B1) |
申请公布日期 |
2007.04.24 |
申请号 |
US20020151595 |
申请日期 |
2002.05.16 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
ERHARDT JEFFREY P.;SAHOTA KASHMIR S.;LINGUNIS EMMANUIL;WONG NGA-CHING |
分类号 |
H01L21/04 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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