发明名称 |
HIGH VOLTAGE TRANSISTOR WITH IMPROVED DRIVING CURRENT |
摘要 |
<p>A semiconductor device and its method of manufacture are provided. Embodiments include forming a first doped region and a second doped region. The first and second doped regions may form a double diffused drain structure as in an HVMOS transistor. A gate-side boundary of the first doped region underlies part of the gate electrode. The second doped region is formed within the first doped region adjacent the gate electrode. A gate-side boundary of the second doped region is separated from a closest edge of a gate electrode spacer by a first distance. An isolation region-side boundary of the second doped region is separated from a closest edge of a nearest isolation region by a second distance.</p> |
申请公布号 |
KR20070042856(A) |
申请公布日期 |
2007.04.24 |
申请号 |
KR20060029448 |
申请日期 |
2006.03.31 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
TIEN WILLIAM WEI YUAN;CHEN FU HSIN;LIN JUI WEN;WU YOU KUO |
分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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