Wafer stack protection seal

摘要

A semiconductor wafer stack and a method of forming a semiconductor device is disclosed. The method includes providing first and second wafers with top and bottom surfaces. The wafers include edge and non-edge regions, and the first wafer includes devices formed in the non-edge region. A first protection seal may be formed at the edge region of the first wafer. The first and second wafers may further be bonded to form a device stack. The protection seal in the device stack contacts the first and second wafers to form a seal, and protects the devices in subsequent processing.

主权项

1. A method of forming a semiconductor device comprising:
providing first and second wafers with top and bottom surfaces, the wafers include edge and non-edge regions, wherein the first wafer includes devices formed in the non-edge region; forming a first protection seal at the edge region of the first wafer, wherein the protection seal is formed by depositing a polymer material on the top surface of the first wafer to a height about 10-40% greater than a final gap between the first and second wafers when bonded; and bonding the first and second wafers to form a device stack, wherein the polymer material on the first wafer contacts the second wafer and is compressed by the first and second wafers, the polymer material expands laterally to cover at least partially edges of the wafers and form a bonded wafer protection seal, the bonded wafer protection seal protects the devices in subsequent processing.