发明名称 Memory area protection system and methods
摘要 In one embodiment, a non-volatile memory device includes a plurality of protection bits denoting that an area of memory in the device must be protected from being erased or programmed. The memory device further includes a majority logic circuit for determining the logic state of the majority of the plurality of protection bits. Another embodiment includes a pattern generator for generating the logic levels to be stored in the plurality of protection bits.
申请公布号 US9406388(B2) 申请公布日期 2016.08.02
申请号 US200711795358 申请日期 2007.05.10
申请人 Micron Technology, Inc. 发明人 De Santis Luca;Gallese Maria Luisa;Imondi Giuliano Gennaro
分类号 G11C16/22;G06F21/79 主分类号 G11C16/22
代理机构 Dorsey & Whitney LLP 代理人 Dorsey & Whitney LLP
主权项 1. A method of protecting a memory area comprising: programming a plurality of memory cells with a predetermined level; computing a logical state of a majority of the plurality of memory cells; and preventing memory cells in the memory area from being programmed responsive to the logical state being a first value, wherein the logical state has the first value when the majority of the plurality of memory cells stores the predetermined level.
地址 Boise ID US