| 主权项 |
1. An electronic device comprising a semiconductor memory unit,
wherein the semiconductor memory unit comprises: a storage cell comprising a variable resistance element; a first selecting element coupled to one end of the storage cell and having a threshold voltage set to a first voltage; a second selecting element coupled to the other end of the storage cell and having a threshold voltage set to a second voltage higher than the first voltage, one or more additional storage cells, each comprising a variable resistance element; one or more additional first selecting elements corresponding to the one or more additional storage cells, respectively, each additional first selecting element coupled to a first end of the corresponding additional storage cell and having a threshold voltage set to the first voltage; and one or more additional second selecting elements corresponding to the one or more additional storage cells, respectively, each additional second selecting element coupled to a second end of a corresponding additional storage cell and having a threshold voltage set to the second voltage. |
