| 摘要 |
<p>There is disclosed a method for producing a silicon single crystal in accordance with the Czochralski method characterized in that a crystal is pulled with controlling a temperature in a furnace so that DELTA G may be 0 or a negative value, where DELTA G is a difference between the temperature gradient Gc ( DEG C/mm) at the center of a crystal and the temperature gradient Ge ( DEG C/mm) at the circumferential portion of the crystal, namely DELTA G =(Ge-Gc), wherein G is a temperature gradient in the vicinity of a solid-liquid interface of a crystal from the melting point of silicon to 1400 DEG C, and with controlling a pulling rate in a range between a pulling rate corresponding to a minimum value of the inner line of OSF region and a pulling rate corresponding to a minimum value of the outer line, when OSF region is generated in an inverted M belt shape in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a diameter of the crystal and the vertical axis represent a pulling rate. There can be provided a method of producing a silicon single crystal wafer by CZ method characterized in that OSF in the ring shape distribution generated when being subjected to thermal oxidation or latent nuclei of OSF is present in a low density, and neither FPD, COP, L/D, LSTD nor defect detected by Cu decoration is present under a stable manufacture condition. <IMAGE></p> |
