发明名称 Error-correction memory architecture for testing production errors
摘要 An integrated circuit, having a method therefor, includes a memory including a plurality of memory lines, each memory line including a plurality of data cells each to store a data bit, and a plurality of error-correction (EC) cells each to store an EC bit corresponding to the data bits stored in the data cells of the memory line; an EC input circuit to generate the EC bits based on the corresponding data bits; an EC output circuit including an EC correction circuit to correct errors in the bits read from the data cells of each of the memory lines in accordance with the bits read from the EC cells of the memory line; and a switch including first inputs to receive the EC bits from the EC input circuit, second inputs to receive test EC bits from EC test nodes of the integrated circuit, and outputs to provide either the EC bits or the EC test bits to the memory in accordance with a test signal.
申请公布号 US7206988(B1) 申请公布日期 2007.04.17
申请号 US20050280892 申请日期 2005.11.17
申请人 MARVELL SEMICONDUCTOR ISRAEL LTD. 发明人 SOLT YOSEF;JOSHUA EITAN
分类号 G11C29/00 主分类号 G11C29/00
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