发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
In a method of manufacturing a semiconductor device, a first trench is formed in a first region of a substrate and a second trench is formed in a second region of the substrate different from the first region. A depth of the first trench is less than that of the second trench. An insulation layer is formed in the second trench, so that semiconductor structures in the first trench are electrically isolated, and a conductive layer fills the first trench and extends above the first trench.
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申请公布号 |
US7205208(B2) |
申请公布日期 |
2007.04.17 |
申请号 |
US20050147312 |
申请日期 |
2005.06.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM DONG-HYUN;SONG DU-HEON |
分类号 |
H01L21/76;H01L21/3205;H01L21/336;H01L21/4763;H01L21/762;H01L21/763;H01L21/8234;H01L21/8242;H01L21/8244;H01L29/78 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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