| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of driving a semiconductor device with low impedance in a low-cost configuration from a low-frequency operation to high-frequency one, and to provide a bypass capacitor module. SOLUTION: A bypass capacitor is formed at one surface side of an Si substrate 10 on which the semiconductor device, such as a CMOS transistor and a diode, are formed. The bypass capacitor is composed of a Vcc power supply layer 30 for supplying power to the semiconductor device, a GND layer 50, and a high-permittivity layer 40 clamped between the Vcc power supply layer 30 and the ground layer 50. COPYRIGHT: (C)2007,JPO&INPIT |
